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SSFP3N25 Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSFP3N25 Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 2 page  SSFP3N25 StarMOS T Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 250 — — V VGS=0V,ID=250 μA △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.39 — V/ ْC Reference to 25ْC,ID=1mA RDS(on) Static Drain-to-Source On-resistance — 1.6 2.0 Ω VGS=10V,ID=1.6A ④ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250 μA gfs Forward Transconductance 0.8 1.2 — S VDS=40V,ID=1.6A — — 25 VDS=250V,VGS=0V IDSS Drain-to-Source Leakage current — — 250 μA VDS=200V,VGS=0V,TJ=150 ْC Gate-to-Source Forward leakage — — 100 VGS=20V IGSS Gate-to-Source Reverse leakage — — -100 nA VGS=-20V Qg Total Gate Charge — 9.6 14.4 Qgs Gate-to-Source charge — 2.4 3.6 Qgd Gate-to-Drain("Miller") charge — 4.5 6.7 nC ID=2.7A VDS=200V VGS=10V td(on) Turn-on Delay Time — 8.9 13 tr Rise Time — 12 18 td(off) Turn-Off Delay Time — 18 27 tf Fall Time — 8.9 15 nS VDD=200V ID=2.7A RG=61 Ω LD Internal Drain Inductance — 4.5 — LS Internal Source Inductance — 7.5 — nH Between lead, 6mm(0.25in.) from package and center of die contact Ciss Input Capacitance — 180 — Coss Output Capacitance — 53 — Crss Reverse Transfer Capacitance — 14 — pF VGS=0V VDS=25V f =1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 2.0 ISM Pulsed Source Current . (Body Diode) ① — — 8.0 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 2.0 V TJ=25 ْC,IS=2.7A,VGS=0V ④ trr Reverse Recovery Time 67 — 340 nS Qrr Reverse Recovery Charge 0.24 0.54 1.2 μC TJ=25 ْC,IF=2.7A di/dt=100A/ μs ④ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by ③ ISD≤2.7A,di/dt≤65A/μS,VDD≤V(BR)DSS, max.junction temperature(see figure 11) TJ≤25 ْ C ② L = 13mH, IAS = 2.7 A, VDD = 50V, ④ Pulse width≤300μS; duty cycle≤2% RG = 25 Ω , Starting TJ = 25°C 2 |
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