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SSFP7N60 Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSFP7N60 Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
2 / 2 page SSFP7N60 StarMOS T Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V,ID=250 μA △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.06 — V/ ْC Reference to 25ْC,ID=1mA RDS(on) Static Drain-to-Source On-resistance — 1.0 1.2 Ω VGS=10V,ID=3.8A ④ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250 μA gfs Forward Transconductance 7.5 8.8 — S VDS=40V,ID=3.8A — — 25 VDS=600V,VGS=0V IDSS Drain-to-Source Leakage current — — 250 μA VDS=480V,VGS=0V,TJ=150 ْC Gate-to-Source Forward leakage — — 100 VGS=20V IGSS Gate-to-Source Reverse leakage — — -100 nA VGS=-20V Qg Total Gate Charge — — 36 Qgs Gate-to-Source charge — — 5.5 Qgd Gate-to-Drain("Miller") charge — — 20 nC ID=7.5A VDS=480V VGS=10V See Fig.6 and 13④ td(on) Turn-on Delay Time — 45 — tr Rise Time — 130 — td(off) Turn-Off Delay Time — 170 — tf Fall Time — 71 — nS VDD=300V ID=3.8A RG=25 Ω LD Internal Drain Inductance — 4.5 — LS Internal Source Inductance — 7.5 — nH Between lead, 6mm(0.25in.) from package and center of die contact Ciss Input Capacitance — 1250 — Coss Output Capacitance — 138 — Crss Reverse Transfer Capacitance — 18 — pF VGS=0V VDS=25V f =1.0MHZ See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 7.5 ISM Pulsed Source Current . (Body Diode) ① — — 30 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.4 V TJ=25 ْC,IS=7.5A,VGS=0V ④ trr Reverse Recovery Time — — 250 nS Qrr Reverse Recovery Charge — 3.5 nC TJ=25 ْC,IF=7.5A di/dt=100A/ μs ④ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by ③ ISD≤7.5A,di/dt≤200A/μS,VDD≤V(BR)DSS, max.junction temperature(see figure 11) TJ≤25 ْ C ② L = 7.3mH, IAS = 7.5 A, VDD = 50V, ④ Pulse width≤300μS; duty cycle≤2% RG = 25 ∧, Starting TJ = 25°C 2 |
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