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KTD1304 Datasheet(PDF) 2 Page - Weitron Technology

Part No. KTD1304
Description  NPN EPITAXIAL PLANAR TRANSISTOR
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Maker  WEITRON [Weitron Technology]
Homepage  http://www.weitron.com.tw
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KTD1304
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
BVCEO
BVCBO
20
25
-
-
Typ
-
-
V
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
BVEBO
ICBO
IEBO
12
-
-
V
0.1
-
-
ĀµA
0.1
-
-
ĀµA
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
IC=0.1A, IB=10mA
hFE(FOR)
200
-
800
-
VCE(sat)
-
-
0.25
V
Base-Emitter Saturation Voltage
IC=0.1A, IB=10mA
VBE(sat)
-
-
1
V
Transition Frequency
Collector Output Capacitance
-
60
-
MHz
DYNAMIC CHARACTERISTICS
fT
-
10
-
pF
Cob
IC=1mA,VCE=10V,f=100MHz
I
I
E=0,VCB=10V,f=1MHz
On Resistance
-
0.6
-
R(on)
B=1mA,Vin =0.3V,f=1KHz
IC=0.1mA,IE=0
IC=1mA,IB=0
IC=0,IE=0.1mA
IE=0,VCB=25V
IC=4mA,VCE=2V
hFE(REV)
20
-
-
IC=4mA,VCE=2V
IC=0,VEB=12V
WEITRON
http://www.weitron.com.tw
2/4
05-Feb-09




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