MAC210FP Series MAC210AFP Series

2

Motorola Thyristor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current (Either Direction)

(VD = Rated VDRM, Gate Open)

TJ = 25°C

TJ = +125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage (Either Direction)

(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)

VTM

—

1.2

1.65

Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms

Minimum Gate Pulse Width = 2

µs)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

—

—

12

12

20

35

50

50

50

75

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms

Minimum Gate Pulse Width = 2

µs)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

—

—

0.2

0.2

0.9

0.9

1.1

1.4

—

—

2

2

2

2.5

—

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 500 mA, TC = +25°C)

IH

—

6

50

mA

Turn-On Time

(Rated VDRM, ITM = 14 A, IGT = 120 mA,

Rise Time = 0.1

µs, Pulse Width = 2 µs)

tgt

—

1.5

—

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,

Gate Unenergized, TC = +70°C)

dv/dt(c)

—

5

—

V/

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,

TC = +70°C)

dv/dt

—

100

—

V/

µs