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SSF4006 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF4006 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
1 / 4 page SSF4006 ©Silikron Semiconductor CO.,LTD. 2009.6.10 Version : 1.0 page 1of4 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْC Continuous drain current,VGS@10V 160 ID@Tc=100ْC Continuous drain current,VGS@10V 100 IDM Pulsed drain current ① 640 A Power dissipation 150 W PD@TC=25ْC Linear derating factor 2.0 W/ْ C VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 480 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 31 v/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.0045 0.005 Ω VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA — — 1 VDS=40V,VGS=0V IDSS Drain-to-Source leakage current — — 10 μA VDS=40V, VGS=0V,TJ=150ْC Gate-to-Source forward leakage — — 100 VGS=20V IGSS Gate-to-Source reverse leakage — — -100 nA VGS=-20V SSF4006 TOP View (T0-220) ID =160A BV=40V Rdson=0.005Ω Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF4006 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF4006 is assembled in high reliability and qualified assembly house. Application: Commercial-industrial application |
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