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SSF4006 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

Part # SSF4006
Description  Advanced trench process technology
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Manufacturer  SILIKRON [Silikron Semiconductor Co.,LTD.]
Direct Link  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF4006 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD.

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SSF4006
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
page
1of4
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25ْC
Continuous drain current,VGS@10V
160
ID@Tc=100ْC
Continuous drain current,VGS@10V
100
IDM
Pulsed drain current ①
640
A
Power dissipation
150
W
PD@TC=25ْC
Linear derating factor
2.0
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
480
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +150
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-case
0.83
RθJA
Junction-to-ambient
62
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
40
V VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
0.0045 0.005
Ω VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
4.0
V VDS=VGS,ID=250μA
1
VDS=40V,VGS=0V
IDSS
Drain-to-Source leakage current
10
μA VDS=40V,
VGS=0V,TJ=150ْC
Gate-to-Source forward leakage
100
VGS=20V
IGSS
Gate-to-Source reverse leakage
-100
nA
VGS=-20V
SSF4006 TOP View (T0-220)
ID =160A
BV=40V
Rdson=0.005Ω
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF4006 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF4006 is assembled
in high reliability and qualified assembly house.
Application:
Commercial-industrial application


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