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MRF6V12500HSR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF6V12500HSR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 10 page 2 RF Device Data Freescale Semiconductor MRF6V12500HR3 MRF6V12500HSR3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) B (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 200 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) VGS(th) 0.9 1.7 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.4 3.2 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3.26 Adc) VDS(on) — 0.25 — Vdc Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.2 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 697 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 1391 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 18.5 19.7 22 dB Drain Efficiency ηD 58 62 — % Input Return Loss IRL — -18 -9 dB 1. Part internally matched both on input and output. |
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