MRF6V12500HSR3 datasheet(2/10 Pages) FREESCALE

Part #	MRF6V12500HSR3

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF6V12500HR3 MRF6V12500HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

2 (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

10

μAdc

Drain-Source Breakdown Voltage

(VGS = 0 Vdc, ID = 200 mA)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

IDSS

—

20

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 90 Vdc, VGS = 0 Vdc)

IDSS

—

200

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 1.32 mA)

VGS(th)

0.9

1.7

2.4

Vdc

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test)

VGS(Q)

1.7

2.4

3.2

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 3.26 Adc)

VDS(on)

—

0.25

—

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

0.2

—

pF

Output Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

697

—

pF

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

1391

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz,

Pulsed, 128 μsec Pulse Width, 10% Duty Cycle

Power Gain

Gps

18.5

19.7

22

dB

Drain Efficiency

ηD

58

62

—

%

Input Return Loss

IRL

—

-18

-9

dB

1. Part internally matched both on input and output.

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MRF6V12500HSR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

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