MRF8S9200NR3 datasheet(5/13 Pages) FREESCALE

Part #	MRF8S9200NR3

Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRF8S9200NR3

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

800

IRL

Gps

ACPR

f, FREQUENCY (MHz)

Figure 2. Output Peak-to-Average Ratio Compression (PARC)

Broadband Performance @ Pout = 58 Watts Avg.

−25

−5

−10

−15

−20

16

21

20.5

20

−40

44

42

40

38

−30

−32

−34

−36

ηD

19.5

19

18.5

18

17.5

17

16.5

825

850

875

900

925

950

975

1000

36

−38

−30

PARC

−2

0

−0.5

−1

−1.5

−2.5

Figure 3. Intermodulation Distortion Products

versus Two-Tone Spacing

TWO−TONE SPACING (MHz)

10

−60

−10

−20

−30

−50

1

100

−40

IM3−U

IM3−L

IM5−U

IM5−L

IM7−L

IM7−U

VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA

Two−Tone Measurements

(f1 + f2)/2 = Center Frequency of 940 MHz

Figure 4. Output Peak-to-Average Ratio

Compression (PARC) versus Output Power

1

Pout, OUTPUT POWER (WATTS)

−1

−3

−5

50

0

−2

−4

30

70

90

130

25

55

50

45

40

35

30

−1 dB = 49.04 W

110

ηD

ACPR

PARC

−50

−20

−25

−30

−40

−35

−45

20

19.5

19

18.5

18

17.5

17

Gps

VDD = 28 Vdc, Pout = 58 W (Avg.)

IDQ = 1400 mA, Single−Carrier W−CDMA

3.84 MHz Channel Bandwidth

Input Signal PAR = 7.5 dB

@ 0.01% Probability on CCDF

VDD = 28 Vdc, IDQ = 1400 mA, f = 940 MHz

Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

−2 dB = 69.69 W

−3 dB = 95.95 W

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MRF8S9200NR3 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

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