ATP106

No. A1597-4/4

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures

or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give

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adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but

are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

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party's intellectual property rights which has resulted from the use of the technical information and products

mentioned above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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PS

This catalog provides information as of November, 2009. Specifications and information herein are subject

to change without notice.

Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

VGS -- Qg

Total Gate Charge, Qg -- nC

EAS -- Ta

Ambient Temperature, Ta --

°C

0

0

25

50

75

100

125

150

100

80

60

20

40

120

175

IT15133

A S O

Drain-to-Source Voltage, VDS -- V

PD -- Tc

Case Temperature, Tc --

°C

IT15131

IT15130

0

5

10

15

25

20

30

0

--2

--4

--6

--1

--3

--5

--8

--7

--9

--10

VDS= --20V

ID= --30A

IT15132

--0.1

--1.0

2

3

5

7

2

3

5

7

2

3

5

2

7

--10

--0.1

IDP= --90A

ID= --30A

100

μs

100ms

Operation in

this area is

limited by RDS(on).

--1.0

23

5 7

2

--10

35 7

2

3

7

5

10

μs

--100

0

0

20

40

60

80

100

140

120

40

35

25

20

30

10

15

5

45

160

PW

≤10μs

Tc=25

°C

Single pulse