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TIG064E8 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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TIG064E8 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page TIG064E8 No. A1602-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector-to-Emitter Breakdown Voltage V(BR)CES IC=2mA, VGE=0V 400 V Collector-to-Emitter Cutoff Current ICES VCE=320V, VGE=0V 10 μA Gate-to-Emitter Leakage Current IGES VGE=±4V, VCE=0V ±10 μA Gate-to-Emitter Threshold Voltage VGE(off) VCE=10V, IC=1mA 0.4 0.9 V Collector-to-Emitter Saturation Voltage VCE(sat) IC=100A, VGE=2.5V 4.2 7 V Input Capacitance Cies VCE=10V, f=1MHz 3100 pF Output Capacitance Coes VCE=10V, f=1MHz 30 pF Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 23 pF Package Dimensions Electrical Connection unit : mm (typ) 7011A-004 Fig.1 Large Current R Load Switching Circuit Note1. Gate Series Resistance RG ≥ 160Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 160Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. 87 6 5 12 3 4 Top view 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 1 4 85 0.15 0 t o 0.02 0.65 2.9 0.3 To p View Bo tto m View 100kΩ CM RL RG VCC + TIG064E8 VGE |
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