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MAC4DHM Datasheet(PDF) 1 Page - Motorola, Inc |
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MAC4DHM Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Thyristor Device Data Sensitive Gate TRIACS Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size Surface Mount DPAK Package • Passivated Die for Reliability and Uniformity • Four–Quadrant Triggering • Blocking Voltage to 600 V • On–State Current Rating of 4.0 Amperes RMS at 93°C • Low Level Triggering and Holding Characteristics ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MAC4DHM Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MAC4DHMT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MAC4DHM–1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (1) (TJ = –40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DHM MAC4DLM VDRM 600 600 Volts On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 93°C) IT(RMS) 4.0 Amps Peak Non–Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 110°C) ITSM 40 Circuit Fusing Consideration (t = 8.3 msec) I2t 6.6 A2sec Peak Gate Power (Pulse Width ≤ 10 msec, TC = 93°C) PGM 0.5 Watts Average Gate Power (t = 8.3 msec, TC = 93°C) PG(AV) 0.1 Peak Gate Current (Pulse Width ≤ 10 msec, TC = 93°C) IGM 0.2 Amps Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 93°C) VGM 5.0 Volts Operating Junction Temperature Range TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) RqJC RqJA RqJA 3.5 88 80 °C/W Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 ″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MAC4DHM/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC4DHM MAC4DLM TRIACS 4.0 AMPERES RMS 600 VOLTS CASE 369A–13 STYLE 6 MT2 MT1 G MT2 G MT2 MT1 Motorola Preferred Devices © Motorola, Inc. 1997 |
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