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IS42S16100E Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS42S16100E Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 82 page IS42S16100E, IS45S16100E 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 08/24/09 DC ELECTRICAL CHARACTERISTICS (RecommendedOperationConditionsunlessotherwisenoted.) Symbol Parameter Test Condition Speed Min. Max. Unit iil InputLeakageCurrent 0V≤ViN ≤VDD, with pins other than –5 5 µA thetestedpinat0V iol OutputLeakageCurrent Outputisdisabled,0V≤ Vout ≤VDD –5 5 µA Voh OutputHighVoltageLevel iout=–2mA 2.4 — V Vol OutputLowVoltageLevel iout=+2mA — 0.4 V icc1 OperatingCurrent(1,2) OneBankOperation, CASlatency=3 Com. -5 — 170 mA BurstLength=1 Com. -6 — 160 trc ≥ trc(min.) Com. -7 — 140 Iout = 0mA Ind, A1 -6 — 170 A2 -6 — 180 Ind, A1 -7 — 160 A2 -7 — 170 icc2p PrechargeStandbyCurrentCKE≤ Vil(max) tck = tck(miN) Com — — 3 mA Ind, A1 — — 4 Icc2ps (InPower-DownMode) tck = ∞ Com — — 2 Ind, A1 — — — A2 — — — icc3N ActiveStandbyCurrent CKE≥ Vih(miN) tck = tck(miN) — — 40 mA Icc3Ns (InNonPower-DownMode) tck = ∞ Com — — 30 Ind, A1 — — 30 A2 — — 30 icc4 OperatingCurrent tck = tck(miN) CAS latency=3 Com -5 — 170 mA (InBurstMode)(1) Iout =0mA Com -6 — 150 Ind, A1 -6 — 170 A2 -6 — 180 Com -7 — 130 Ind,A1 -7 — 150 A2 -7 — 160 CAS latency = 2 Com -5 — 170 mA Com -6 — 150 Ind, A1 -6 — 170 A2 -6 — 180 Com -7 — 130 Ind,A1 -7 — 150 A2 -7 — 160 Notes: 1.Thesearethevaluesattheminimumcycletime.Sincethecurrentsaretransient,thesevaluesdecreaseasthecycletimein- creases.Alsonotethatabypasscapacitorofatleast0.01µFshouldbeinsertedbetweenVDD andGNDforeachmemorychip tosuppresspowersupplyvoltagenoise(voltagedrops)duetothesetransientcurrents. 2. Icc1 and Icc4dependontheoutputload.ThemaximumvaluesforIcc1 and Icc4 are obtained with the output open state. |
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