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IS25C128A-2GLI Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS25C128A-2GLI Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
7 / 17 page Integrated Silicon Solution, Inc. 7 Advanced Information Rev. 00E 11/25/08 IS25C128A ABSOLUTE MAXIMUM RATINGS (1) Symbol Parameter Value Unit VS Supply Voltage -0.5 to + 6.5 V VP Voltage on Any Pin –0.5 to Vcc + 0.5 V TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C IOUT Output Current 5 mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma- nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 6 pF COUT Output Capacitance VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters and not 100% tested. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. POWER SUPPLY CHARACTERISTICS TA = –40°C to +85°C Symbol Parameter Test Conditions Min. Max. Unit ICC1 Operating Current Read/Write at 10 MHz (Vcc = 5V) — 10.0 mA ICC2 Operating Current Read/Write at 5 MHz (Vcc = 2.5V) — 4.0 mA ICC3 Operating Current Read/Write at 5 MHz (Vcc = 1.8V) — 3.0 mA ISB1 Standby Current Vcc = 5.0V, VIN = VCC or GND, CS = Vcc — 25 µA ISB2 Standby Current Vcc = 2.5V, VIN = VCC or GND, CS = Vcc — 20 µA ISB3 Standby Current Vcc = 1.8V, VIN = VCC or GND, CS = Vcc — 15 µA |
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