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IS42S83200C Datasheet(PDF) 8 Page - Integrated Silicon Solution, Inc

Part # IS42S83200C
Description  256 Mb Single Data Rate Synchronous DRAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S83200C Datasheet(HTML) 8 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
04/02/09
IS42S83200C
IS42S16160C
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Unit
Note
Parameter
Symbol
-6
-7
-75
Row active to row active delay
tRRD(min)
12
14
15
ns
1
RAS to CAS delay
tRCD(min)
18
20
20
ns
1
Row precharge time
tRP(min)
18
20
20
ns
1
tRAS(min)
42
45
45
ns
1
Row active time
tRAS(max)
100K
100K
100K
ns
Row cycle time
tRC(min)
60
63
65
ns
1
R e fre sh in te rva l tim e
tREF(max)
64
64
64
ms
Auto refresh cycle time
tARFC(min)
60
70
75
ns
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next
higher integer.
Last data in to row precharge
tRDL (min)
2
2
2
CLK
Last data in to active delay
tDAL (min)
5
5
5
CLK
Last data in to new col. address delay
tCDL (min)
1
1
1
CLK
Last data in to burst stop
tDBL (min)
1
1
1
CLK
Mode register set cycle time
tMRD (min)
2
2
2
CLK


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