IS42S16160C-6TL datasheet(6/40 Pages) ISSI

Part #	IS42S16160C-6TL

Description	256 Mb Single Data Rate Synchronous DRAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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6

Integrated Silicon Solution, Inc. — www.issi.com

Rev. C

04/02/09

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, Commerical grade:TA = 0 to 70

oC, Industrial grade:TA = -40 to 85oC)

±

Version

Parameter

Symbol

Test Condition

Organization

-6

-7

-75

Unit

Note

X 8

140

130

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC ! tRC(min)

IO = 0 mA

X 16

140

135

mA

1

ICC2P

CKE

!VIL(max), tCC = 10ns

X 8 / X 16

15

Precharge Standby

Current in

power-down mode

ICC2PS

CKE & CLK

!VIL(max), tCC =

X 8 / X 16

5

mA

ICC2N

CKE ! VIH(min), CS ! VIH(min),

tCC = 10ns

Input signals are changed one

time during 20ns

X 8 / X 16

4

0

4

0

4

0

Precharge Standby

Current

in non power-down

mode

ICC2NS

CKE

! VIH(min), CLK

!

VIL(max), tCC =

!

Input signals are stable

X 8 / X 16

30

mA

ICC3P

CKE

!VIL(max), tCC = 10ns

X 8 / X 16

5

0

5

0

5

0

Active Standby

Current

in power-down mode

ICC3PS

CKE & CLK

!VIL(max), tCC =

X 8 / X 16

2

0

2

0

2

0

mA

ICC3N

CKE ! VIH(min), CS ! VIH(min),

tCC = 10ns

Input signals are changed one

time during 20ns

X 8 / X 16

65

Active Standby

Current

in non power-down

mode

(One Bank Active)

ICC3NS

CKE ! VIH(min), CLK

!

VIL(max), tCC =

!

Input signals are stable

X 8 / X 16

45

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

X 8 / X 16

180

mA

1

Refresh Current

ICC5

tARFC ! tARFC(min)

X 8 / X 16

210

185

175

mA

2

Self Refresh Current

ICC6

CKE

!0.2V

X 8 / X 16

6

mA

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

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