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IS61C25616AL Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc |
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IS61C25616AL Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc |
3 / 17 page Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3 Rev. C 03/21/2008 IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS TRUTH TABLE I/O PIN Mode WE WE WE WE WE CE CE CE CE CE OE OE OE OE OE LB LB LB LB LB UB UB UB UB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z ISB1, ISB2 Output Disabled H L H X X High-Z High-Z ICC1, ICC2 X L X H H High-Z High-Z Read H L L L H DOUT High-Z ICC1, ICC2 H L L H L High-Z DOUT H LLLL DOUT DOUT Write L L X L H DIN High-Z ICC1, ICC2 L L X H L High-Z DIN LL X L L DIN DIN ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.5 W IOUT DC Output Current (LOW) 20 mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V VIH Input HIGH Voltage 2.2 VDD + 0.5 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA Ind. –2 2 Auto. –5 5 ILO Output Leakage GND ≤ VOUT ≤ VDD Com. –1 1 µA Outputs Disabled Ind. –2 2 Auto. –5 5 Note: 1. VIL = –3.0V for pulse width less than 10 ns. CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 5 pF COUT Output Capacitance VOUT = 0V 7 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V. |
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