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IS61C5128AL-10KLI Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS61C5128AL-10KLI Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 19 page 6 Integrated Silicon Solution, Inc. — www.issi.com Rev. B 03/04/2008 IS61C5128AL/AS IS64C5128AL/AS HIGH SPEED OPTION (IS61/64C5128AL) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -10 ns -12 ns Symbol Parameter Test Conditions Min. Max. Min. Max. Unit ICC1 VDD Operating VDD = VDD MAX., CE = VIL Com. —45 — 45 mA Supply Current IOUT = 0 mA, f = 0 Ind. —50 — 50 Auto. —55 — 55 ICC2 VDD Dynamic Operating VDD = VDD MAX., CE = VIL Com. —50 — 45 mA Supply Current IOUT = 0 mA, f = fMAX Ind. —55 — 50 Auto. —70 — 60 typ.(2) 30 25 ISB1 TTL Standby Current VDD = VDD MAX., Com. —15 — 15 mA (TTL Inputs) VIN = VIH or VIL Ind. —20 — 20 CE ≥ VIH, f = 0 Auto. —30 — 30 ISB2 CMOS Standby VDD = VDD MAX., Com. —8 — 8 mA Current (CMOS Inputs) CE ≤ VDD – 0.2V, Ind. —12 — 12 VIN ≥ VDD – 0.2V, or Auto. —20 — 20 VIN ≤ 0.2V, f = 0 typ.(2) 2 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested. LOW POWER OPTION (IS61/64C5128AS) POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -25 ns Symbol Parameter TestConditions Min. Max. Unit ICC Averageoperating CE=VIL,VDD=Max. Com. — 10 mA Current I OUT= 0 mA, f= 0 Ind. — 15 Auto. — 20 ICC1VDDDynamicOperating VDD =Max., CE=VIL Com. — 25 mA SupplyCurrent IOUT = 0 mA, f = fMAX Ind. — 30 Auto. — 40 typ.(2) 15 ISB1 TTLStandbyCurrent VDD=Max., Com. — 1 mA (TTLInputs) VIN =VIH orVIL, CE ≥VIH, Ind. — 1.5 f = 0 Auto. — 2 ISB2 CMOSStandby VDD=Max., Com. — 0.8 mA Current(CMOSInputs) CE ≥ VDD–0.2V, Ind. — 0.9 VIN ≥VDD–0.2V, Auto. — 2 or VIN ≤VSS+0.2V, f=0 typ. 0.2 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested. |
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