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IS61DDB42M36-300M3 Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

Part # IS61DDB42M36-300M3
Description  72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61DDB42M36-300M3 Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
7
Rev. A
05/14/09
72 Mb (2M x 36 & 4M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
The Timing Reference Diagram for Truth Table on page
8 is helpful in understanding the clock and write truth
tables, as it shows the cycle relationship between clocks, address, data-in, data-out, and controls. All read
and write commands are issued at the beginning of cycles t and tw, respectively.
State Diagram
Linear Burst Sequence Table
Burst Sequence
Case 1
Case 2
Case 3
Case 4
SA1
SA0
SA1
SA0
SA1
SA0
SA1
SA0
First Address
000
11011
Second Address
011
01100
Third Address
101
10001
Fourth Address
110
00110
Power Up
DDR
-II Write
NOP
DDR
-II Read
Write
Write
Notes: 1. Internal burst counter is fixed as four-bit linear; that is, when first address is A0+0, next internal burst address is A0+1.
2. Read refers to read active status with R/W = high.
4. Load refers to read new address active status with LD = low.
3. Write refers to write active status with R/W = low.
Load New Address
Load
Load
Read
Load
Load
Load
5. Load is read new address inactive status with LD = high.
Increment
Increment
Always
Always
Write
Read
Read Address
Write Address
Dcount = 1
Dcount = 1
Dcount = 0
Dcount = 2
Load
Dcount = 2
Dcount = Dcount + 1
Dcount = Dcount + 1


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