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IS64C25616AL-12TA3 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS64C25616AL-12TA3 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 17 page Integrated Silicon Solution, Inc. — www.issi.com 1 Rev. C 03/21/2008 Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS FEATURES HIGH SPEED: (IS61/64C25616AL) • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS) • High-speed access time: 25 ns • Low Active Power: 75 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh required • Available in 44-pin SOJ package and 44-pin TSOP (Type II) • Commercial, Industrial and Automotive tempera- ture ranges available • Lead-free available DESCRIPTION The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable ( WE) controls both writing and reading of the memory. A data byte allows Upper Byte ( UB) and Lower Byte (LB) access. The IS61C25616AL/AS and IS64C25616AL/AS are pack- aged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II). FUNCTIONAL BLOCK DIAGRAM MARCH 2008 A0-A17 CE OE WE 256K x 16 MEMORY ARRAY DECODER COLUMN I/O CONTROL CIRCUIT GND VDD I/O DATA CIRCUIT I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte UB LB 256K x 16 HIGH-SPEED CMOS STATIC RAM |
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