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IS61DDB24M18-250M3 Datasheet(PDF) 9 Page - Integrated Silicon Solution, Inc |
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IS61DDB24M18-250M3 Datasheet(HTML) 9 Page - Integrated Silicon Solution, Inc |
9 / 25 page Integrated Silicon Solution, Inc. 9 Rev. B 11/10/09 72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs X36 Write Truth Table Use the following table with the Timing Reference Diagram for Truth Table on page 8. Operation K (tw) K (tw + 0.5) BW0 BW1 BW2 BW3 DB DB+1 Write Byte 0 L → L H H H D0-8 (tw + 1) Write Byte 1 L →H H L H H D9-17 (tw + 1) Write Byte 2 L →H H H L H D18-26 (tw + 1) Write Byte 3 L →H H H H L D27-35 (tw + 1) Write All Bytes L →H L L L L D0-35 (tw + 1) Abort Write L →H H H H H Don’t care Write Byte 0 L →H L H H H D0-8 (tw + 1.5) Write Byte 1 L →H H L H H D9-17 (tw+1.5) Write Byte 2 L →H H H L H D18-26 (tw+1.5) Write Byte 3 L →H HHH L D27-35 (tw+1.5) Write All Bytes L →H L L L L D0-35 (tw+1.5) Abort Write L →H HHH H Don’t care Notes; 1. For all cases. R/W must be active low during the rising edge of K occurring at time tW. 2. For timing definitions, refer to the AC Characteristics on page 15. Signals must have AC specifications with respect to switching clocks K and K. X18 Write Truth Table (Use this table with the Timing Reference Diagram for Truth Table on page 8.) Operation K (tw) K (tw+0.5) BW0 BW1 DB DB+1 Write Byte 0 on B L →H L H D0-8 (tw + 1) Write Byte 1 on B L →H H L D9–17 (tw + 1) Write All Bytes on B L →H L L D0–17 (tw + 1) Abort Write on B L →H H H Don’t care Write Byte 1 on B+1 L →H L H D0–8 (tw + 1.5) Write Byte 2 on B+1 L →H H L D9–17 (tw + 1.5) Write All Bytes on B+1 L →H L L D0–17 (tw + 1.5) Abort Write on B+1 L →H H H Don’t care Notes; 1. Refer to Timing Reference Diagram for Truth Table on page 8. Cycle time starts at n and is referenced to the K clock. 2. For all cases, R/W must be active low during the rising edge of K occurring at tw. 3. For timing definitions, refer to the AC Characteristics on page 15. Signals must have AC specs with respect to switching clocks K and K. |
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