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IS61DDB22M36-300M3LI Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc |
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IS61DDB22M36-300M3LI Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc |
6 / 25 page 6 Integrated Silicon Solution, Inc. Rev. B 11/10/09 72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs Application Example SA LD R/W BW0 BW1 C C K K DQ0–17 ZQ SRAM #4 R=250 Vt Data-In/Data-Out Address LD R/W BW Memory Controller Return CLK Source CLK Return CLK Source CLK SA LD R/W BW0 BW1 C C K K DQ0–17 ZQ SRAM #1 R=250 Vt R Vt Vt R=50 Vt=VREF R Power-Up and Power-Down Sequences The following sequence is used for power-up: 1. The power supply inputs must be applied in the following order while keeping Doff in LOW logic state: 1) VDD 2) VDDQ 3) VREF 2. Start applying stable clock inputs (K, K, C, and C). 3. After clock signals have stabilized, change Doff to HIGH logic state. 4. Once the Doff is switched to HIGH logic state, wait an additional 1024 clock cycles to lock the DLL. NOTES: 1. The power-down sequence must be done in reverse of the power-up sequence. 2. VDDQ can be allowed to exceed VDD by no more than 0.6V. 3. VREF can be applied concurrently with VDDQ. |
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