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IS61DDPB24M18-375M3 Datasheet(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS61DDPB24M18-375M3 Datasheet(HTML) 10 Page - Integrated Silicon Solution, Inc |
10 / 24 page 10 Integrated Silicon Solution, Inc. Rev. 00A 03/31/08 72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs Absolute Maximum Ratings Item Symbol Rating Units Power supply voltage VDD -0.5 to 2. 9 V Output power supply voltage VDDQ -0.5 to 2. 9 V Input voltage VIN -0.5 to VDD+0.3 V Data out voltage VDOUT -0.5 to 2.6 V Operating temperature TA 0 to 70 ° C Junction temperature TJ 110 ° C Storage temperature TSTG -55 to +125 ° C Note: Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and func- tional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. |
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