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IS61LF204818A-7.5TQLI Datasheet(PDF) 8 Page - Integrated Silicon Solution, Inc

Part # IS61LF204818A-7.5TQLI
Description  36Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LF204818A-7.5TQLI Datasheet(HTML) 8 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
Rev. B
04/17/08
IS61LF102436A IS61LF204818A
IS61VF102436A IS61VF204818A
TRUTH TABLE(1-8) (3CEoption)
OPERATION
ADDRESS CE
CE2
CE2
ZZ
ADSP ADSC
ADV WRITE
OE
CLK
DQ
DeselectCycle,Power-Down
None
H
X
X
L
X
L
X
X
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
L
L
X
X
X
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
L
X
X
X
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
X
L
L
H
L
X
X
X
L-H
High-Z
DeselectCycle,Power-Down
None
L
H
X
L
H
L
X
X
X
L-H
High-Z
SnoozeMode,Power-Down
None
X
X
X
H
X
X
X
X
X
X
High-Z
ReadCycle,BeginBurst
External
L
L
H
L
L
X
X
X
L
L-H
Q
ReadCycle,BeginBurst
External
L
L
H
L
L
X
X
X
H
L-H
High-Z
WriteCycle,BeginBurst
External
L
L
H
L
H
L
X
L
X
L-H
D
ReadCycle,BeginBurst
External
L
L
H
L
H
L
X
H
L
L-H
Q
ReadCycle,BeginBurst
External
L
L
H
L
H
L
X
H
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
X
X
X
L
H
H
L
H
H
L-H
High-Z
ReadCycle,ContinueBurst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
ReadCycle,ContinueBurst
Next
H
X
X
L
X
H
L
H
H
L-H
High-Z
WriteCycle,ContinueBurst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WriteCycle,ContinueBurst
Next
H
X
X
L
X
H
L
L
X
L-H
D
ReadCycle,SuspendBurst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
X
X
X
L
H
H
H
H
H
L-H
High-Z
ReadCycle,SuspendBurst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
ReadCycle,SuspendBurst
Current
H
X
X
L
X
H
H
H
H
L-H
High-Z
WriteCycle,SuspendBurst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WriteCycle,SuspendBurst
Current
H
X
X
L
X
H
H
L
X
L-H
D
NOTE:
1. Xmeans“Don’tCare.”HmeanslogicHIGH.LmeanslogicLOW.
2. For WRITE, L means one or more byte write enable signals (BWa-h) and BWEareLOWorGWisLOW.WRITE = H for all
BWx
, BWE, GWHIGH.
3. BWaenablesWRITEstoDQa’sandDQPa.BWbenablesWRITEstoDQb’sandDQPb.BWcenablesWRITEstoDQc’s and
DQPc.BWdenablesWRITEstoDQd’sandDQPd.BWeenablesWRITEstoDQe’sandDQPe.BWfenablesWRITEstoDQf’s
andDQPf.BWgenablesWRITEstoDQg’sandDQPg.BWhenablesWRITEstoDQh’sandDQPh.DQPa-DQPhareavailable
onthex72version.DQPaandDQPbareavailableonthex18version. DQPa-DQPdareavailableonthex36version.
4. All inputs except OEandZZmustmeetsetupandholdtimesaroundtherisingedge(LOWtoHIGH)ofCLK.
5. Waitstatesareinsertedbysuspendingburst.
6. ForaWRITEoperationfollowingaREADoperation,OEmustbeHIGHbeforetheinputdatasetuptimeandheldHIGHduring
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSPLOWalwaysinitiatesaninternalREADattheL-HedgeofCLK.AWRITEisperformedbysettingoneormorebytewrite
enable signals and BWELOWorGWLOWforthesubsequentL-HedgeofCLK.SeeWRITEtimingdiagramforclarification.


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