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IS61QDB24M18-300M3L Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc

Part # IS61QDB24M18-300M3L
Description  72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 2) Synchronous SRAMs
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61QDB24M18-300M3L Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
11
Rev. A
05/14/09
72 Mb (2M x 36 & 4M x 18)
QUAD (Burst of 2) Synchronous SRAMs
Recommended DC Operating Conditions (TA = 0 to +70°C)
Parameter
Symbol
Minimum
Typical
Maximum
Units
Notes
Supply voltage
VDD
1.8 - 5%
1.8 + 5%
V
1
Output driver supply voltage
VDDQ
1.4
1.9
V
1
Input high voltage
VIH
VREF +0.1
VDDQ + 0.3
V
V
1, 2
1, 3
Input low voltage
VIL
-0.
3
VREF - 0.1
Input reference voltage
VREF
0.68
0.95
V
1, 5
Clocks signal voltage
VIN - CLK
-0.
3
VDDQ + 0.3
V
1, 4
1. All voltages are referenced to VSS. All VDD, VDDQ, and VSS pins must be connected.
2. VIH(Max) AC = See 0vershoot and Undershoot Timings.
3. VIL(Min) AC = See 0vershoot and Undershoot Timings.
4. VIN-CLK specifies the maximum allowable DC excursions of each clock (K, K, C, and C).
5. Peak-to-peak AC component superimposed on VREF may not exceed 5% of VREF.
0vershoot and Undershoot Timings
PBGA Thermal Characteristics
Item
Symbol
Rating
Units
Thermal resistance junction to ambient (airflow = 1m/s)
R
ΘJA
18.6
° C/W
Thermal resistance junction to case
R
ΘJC
4.3
° C/W
Thermal resistance junction to pins
R
ΘJB
1.77
° C/W
VDDQ
20% Min Cycle Time
VDDQ+0.6V
GND-0.6V
GND
20% Min Cycle Time
Overshoot Timing
Undershoot Timing
VIH(Max) AC
VIL(Min) AC


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