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IS61QDB24M18-300M3L Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS61QDB24M18-300M3L Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
7 / 27 page Integrated Silicon Solution, Inc. — 1-800-379-4774 7 Rev. A 05/14/09 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 2) Synchronous SRAMs The Timing Reference Diagram for Truth Table on page 8 is helpful in understanding the clock and write truth tables, as it shows the cycle relationship between clocks, address, data in, data out, and controls. All read and write commands are issued at the beginning of cycle “t”. State Diagram Power Up Write NOP Load New Write Address DDR Write Read NOP Load New Read Address DDR Read Read Write Read Write Read Write Read Write Always (fixed) Always (fixed) Notes: 1. Internal burst counter is fixed as two-bit linear; that is, when first address is A0+0, next internal burst address is A0+1. 2. Read refers to read active status with R = low. Read refers to read inactive status with R = high. 5. State machine control timing sequence is controlled by K. 4. The read and write state machines can be active simultaneously. 3. Write refers to write active status with W = low. Write refers to write inactive status with W = high. |
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