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IS61QDPB42M36-375M3L Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part # IS61QDPB42M36-375M3L
Description  72 Mb (2M x 36 & 4M x 18) QUADP (Burst of 4) Synchronous SRAMs
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61QDPB42M36-375M3L Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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6
Integrated Silicon Solution, Inc.
Rev.
A
05/14/09
72 Mb (2M x 36 & 4M x 18)
QUADP (Burst of 4) Synchronous SRAMs
Application Example
SA
R W BW0 BW1
K K
D
Q
ZQ
SRAM #4
R=250
Vt
Data In
Data Out
Address
R
W
BW
Memory
Controller
Source CLK
Source CLK
SA
R W BW0 BW1
K K
D
Q
ZQ
SRAM #1
R=250
Vt
Vt
R
R=50
Ω Vt=VREF
R
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
CQ
CQ
CQ
CQ
Power-Up and Power-Down Sequences
The following sequence is used for power-up:
1. The power supply inputs must be applied in the following order while keeping Doff in LOW logic state:
1) VDD
2) VDDQ
3) VREF
2. Start applying stable clock inputs (K, K, C, and C).
3. After clock signals have stabilized, change Doff to HIGH logic state.
4. Once the Doff is switched to HIGH logic state, wait an additional 1024 clock cycles to lock the DLL.
NOTES:
1. The power-down sequence must be done in reverse of the power-up sequence.
2. VDDQ can be allowed to exceed VDD by no more than 0.6V.
3. VREF can be applied concurrently with VDDQ.


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