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MP6750 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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MP6750 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page MP6750 2001-03-13 2/5 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ± 20 V DC IC 15 Collector current 1ms ICP 30 A DC IF 15 Forward current 1ms IFM 30 A Collector power dissipation (Tc = 25°C) PC 55 W Junction temperature Tj 150 °C Storage temperature range Tstg −40 ~ 125 °C Isolation voltage VIsol 2500 (AC 1 minute) V Screw torque ― 1.5 N·m Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 20V, VCE = 0 ― ― ± 20 µA Collector cut-off current ICES VCE = 600V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (off) IC = 15mA, VCE = 5V 3.0 ― 6.0 V Collector-emitter saturation voltage VCE (sat) IC = 15A, VGE = 15V ― 3.0 4.0 V Input capacitance Cies VCE = 10V, VGE = 0, f = 1MHz ― 1000 ― pF Rise time tr ― 0.3 0.6 Turn-on time ton ― 0.4 0.8 Fall time tf ― 0.2 0.35 Switching time Turn-off time toff ― 0.5 1.0 µs Forward voltage VF IF = 15A, VGE = 0 ― 1.7 2.5 V Reverse recovery time trr IF = 15A, VGE = −10V di / dt = 50A / µs ― 0.08 0.15 µs Transistor ― ― 2.27 Thermal resistance Rth (j-c) Diode ― ― 3.09 °C / W · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 000707EAA2 |
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