Features
1 of 14
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
CGR-0118Z
DUAL CATV 5MHz to 65MHz CATV AMP IC
RFMD’s CGR-0118Z is a high performance 75
Ω push-pull InGaP HBT
MMIC amplifier utilizing a Darlington configuration with an active bias net-
work. The active bias netwrok provides stable current over temperature
and process variations. Designed to run over a wide range of supply volt-
age, from 5V to 12V, the CGR-0118Z does not require a bias resistor as
compared to typical Darlington amplifiers. The CGR-0118Z is designed for
75
Ω return path applications where linear performance is needed over
the frequency range 5MHz to 65MHz.
Amplifier Configuration
1
2
3
4
8
7
6
5
Flat Gain Response:
25.4 ± 0.3dB
Excellent OIP3: 37.5dBm
Superior Return Loss: >20dB
Extremely Low CSO/CTB:
-80/-67dBc
Low Noise Figure: 3.0dB
Single Supply: 5V to 12V
Low DC Current: 130mA
Applications
CATV Return Path Amplifier
CATV Line Amplifier
Optical RX/TX
Prelim DS090922
Package: SOIC 8
CGR-0118Z
Dual CATV
5MHz to
65MHz CATV
Amp IC
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Electrical Characteristics
VCC=12V, TA=25°C, 75Ω System
Gain
25.4
dB
5MHz to 65MHz
Gain Slope
±0.3
dB
5MHz to 65MHz
Input Return Loss
20
dB
5MHz to 65MHz
Output Return Loss
20
dB
5MHz to 65MHz
Noise Figure
3
dBc
5MHz to 65MHz
Composite Triple Beat
-60
dBc
T7-T13 50dBmV/Channel
Cross Modulation
-63
dBc
T7-T13 50dBmV/Channel
Composite Second Order
-80
dBc
T7-T13 50dBmV/Channel
1dB Gain Compression Point
73.5
dBmV
65MHz
Output 3rd Order Intercept Point
37.5
dBm
5MHz, 65MHz (5dBm/tone at output, 1MHz spac-
ing)
Supply Voltage
12
V
Operating Current
130
mA