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CMT06N60N220 Datasheet(PDF) 1 Page - Champion Microelectronic Corp. |
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CMT06N60N220 Datasheet(HTML) 1 Page - Champion Microelectronic Corp. |
1 / 6 page CMT06N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Front View 1 23 D S G N-Channel MOSFET 2006/10/11 Rev. 1.2 Champion Microelectronic Corporation Page 1 |
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