8550S datasheet(1/2 Pages) DAYA

Part #	8550S

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	DAYA [Daya Electric Group Co., Ltd.]

Direct Link	http://www.cndaya.com

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TO-92

Plastic-Encapsulate Transistors

8550S TRANSISTOR (PNP)

FEATURE

Excellent hFE linearity

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Junction and Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100uA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100uA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -40V, IE=0

-0.1

uA

Collector cut-off current

ICEO

VCE= -20V,IB=0

-0.1

uA

Emitter cut-off current

IEBO

VEB= - 3V, IC=0

-0.1

uA

hFE(1)

VCE= -1V, IC= -50mA

85

400

DC current gain

hFE(2)

VCE= -1V, IC= -500mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB=-50mA

-1.2

V

Transition frequency

fT

VCE=- 6V, IC=-20mA

f =30MHz

150

MHz

CLASSIFICATION OF hFE(1)

Rank

B

C

D

D3

Range

85-160

120-200

160-300

300-400

1 2 3

TO-92

1.

EMITTER

2.

COLLECTOR

3.

BASE

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8550S Datasheet(PDF) 1 Page - Daya Electric Group Co., Ltd.

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