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UF8010 Datasheet(PDF) 4 Page - Unisonic Technologies |
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UF8010 Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page  UF8010 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R502-348.a TEST CIRCUITS AND WAVEFORMS RG 1 2 - + 3 + - D.U.T. 4 - + + - VDD * Reverse Polarity of D.U.T. for P-Channel · dv/dt controlled by RG · Driver same type as D.U.T · ISD controlled by Duty Factor “D” · D.U.T. – Device Under Test Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer Peak Diode Recovery dv/dt Test Circuit VDD ISD Ripple≤5％ Inductor Current D.U.T. VDS Waveform 4 2 Body Diode Forward Drop Body Diode Forward Current Diode Recovery dv/dt di/dt D.U.T. ISD Waveform Re-Applied Voltage Reverse Recovery Current 3 1 P.W. Period Driver Gate Drive Period P.W. D= VGS=10V* * VGS = 5.0V for Logic Level Devices |
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