UT3N06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-366.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Continuous Drain Current

3.0

A

Pulsed Drain Current (Note 3.4)

10

A

Power Dissipation (Ta= 25°C)

1.38

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Surface mounted on 1 in

4. Pulse width ≤300μs, duty cycle≤2%.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient (Note)

90

°C/W

Note: Surface mounted on 1 in

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Breakdown Voltage Temperature Coefficient

J

DSS

T

Δ

BV

Δ

0.05

V/°C

Drain-Source Leakage Current

10

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

3.0

V

90

mΩ

Drain to Source On-state Resistance

120

mΩ

DYNAMIC PARAMETERS

Input Capacitance

490

780

pF

Output Capacitance

55

pF

Reverse Transfer Capacitance

40

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note)

6

ns

Turn-ON Rise Time

5

ns

Turn-OFF Delay Time

16

ns

Turn-OFF Fall-Time

3

ns

Total Gate Charge (Note)

6

10

nC

Gate Source Charge

1.6

nC

Gate Drain Charge

3

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

1.2

V

Reverse Recovery Time

25

ns

Reverse Recovery Charge

26

nC

Note: Pulse width ≤300μs, duty cycle≤2%.