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UT110N03 Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT110N03 Datasheet(HTML) 1 Page - Unisonic Technologies |
1 / 4 page UNISONIC TECHNOLOGIES CO., LTD UT110N03 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-367.A N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT110N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=26V * ID=110A * RDS(ON) =4.8mΩ@VGS=10 V * RDS(ON) =7.0mΩ@VGS=4.5 V SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT110N03L-TA3-T UT110N03G-TA3-T TO-220 G D S Tube |
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