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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 14 - 27 GHz

v03.0209

General Description

Features

Functional Diagram

Noise Figure: 2.5 dB @ 20 GHz

Gain: 18 dB

P1dB Output Power: +14 dBm

Supply Voltage: +4V @ 90 mA

Die Size: 2.25 x 1.58 x 0.1 mm

Electrical Specifications*

Typical Applications

This HMC-ALH216 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

The HMC-ALH216 is a GaAs MMIC HEMT Wideband

Low Noise Amplifier die which operates between 14

and 27 GHz. The amplifier provides 18 dB of gain,

2.5 dB noise figure and +14 dBm of output power at

1 dB gain compression while requiring only 90 mA

from a +4V supply voltage. The HMC-ALH216 amplifier

is

ideal

for

integration

into

Multi-Chip-Modules

(MCMs) due to its small size.

HMC-ALH216

Parameter

Min.

Typ.

Max.

Units

Frequency Range

14 - 27

GHz

Gain

14

18

dB

Gain Variation over Temperature

0.02

dB / °C

Noise Figure

2.7

4.5

dB

Input Return Loss

15

dB

Output Return Loss

15

dB

Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.)

90

mA

*Unless otherwise indicated, all measurements are from probed die