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GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 81 - 86 GHz

v03.0209

General Description

Features

Functional Diagram

Gain: 22 dB

P1dB: +17.5 dBm

Supply Voltage: +4V

50 Ohm Matched Input/Output

Die Size: 2.65 x 1.6 x 0.05 mm

Typical Applications

This HMC-AUH317 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

• Military & Space

• E-Band Communication Systems

The HMC-AUH317 is a high dynamic range, three

stage GaAs HEMT MMIC Medium Power Amplifier

which operates between 81 and 86 GHz. The HMC-

AUH317 provides 22 dB of gain, and an output power

of +17.5 dBm at 1 dB compression from a +4V supply

voltage. All bond pads and the die backside are Ti/Au

metallized and the amplifier device is fully passivated

for reliable operation. The HMC-AUH317 GaAs

HEMT MMIC Medium Power Amplifier is compatible

with conventional die attach methods, as well as

thermocompression and thermosonic wire bonding,

making it ideal for MCM and hybrid microcircuit

applications. All data shown herein is measured with

the chip in a 50 Ohm environment and contacted with

RF probes.

HMC-AUH317

Electrical Specifications

[2]

Parameter

Min.

Typ.

Max.

Units

Frequency Range

81 - 86

GHz

Gain

19

22

dB

Input Return Loss

9dB

Output Return Loss

5dB

Output power for 1dB Compression (P1dB)

17.5

dBm

Saturated Output Power (Psat)

19.5

dBm

Supply Current (Idd1+Idd2)

160

mA

[1] Unless otherwise indicated, all measurements are from probed die

[2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ -0.1V) to achieve Idd