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HMC-AUH317 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC-AUH317 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page 3 3 - 226 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz v03.0209 General Description Features Functional Diagram Gain: 22 dB P1dB: +17.5 dBm Supply Voltage: +4V 50 Ohm Matched Input/Output Die Size: 2.65 x 1.6 x 0.05 mm Typical Applications This HMC-AUH317 is ideal for: • Short Haul / High Capacity Links • Wireless LAN Bridges • Military & Space • E-Band Communication Systems The HMC-AUH317 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC- AUH317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-AUH317 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. HMC-AUH317 Electrical Specifications , T A = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 160 mA [2] Parameter Min. Typ. Max. Units Frequency Range 81 - 86 GHz Gain 19 22 dB Input Return Loss 9dB Output Return Loss 5dB Output power for 1dB Compression (P1dB) 17.5 dBm Saturated Output Power (Psat) 19.5 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ -0.1V) to achieve Idd total = 160 mA |
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