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GMR10H100CTBF3T Datasheet(PDF) 3 Page - Gamma Microelectronics Inc. |
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GMR10H100CTBF3T Datasheet(HTML) 3 Page - Gamma Microelectronics Inc. |
3 / 6 page 3 GMR10H100C 10A SCHOTTKY RECTIFIER Absolute Maximum Ratings PARAMETER SYMBOL VALUE UNITS Repetitive Peak Reverse Voltage VRPM 100 V RMS Forward Current IF(RMS) 10 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) IFSM 135 A Maximum Operating Junction Temperature TJ, 175 °C Operating storage temperature TSTG -45 to +150 °C Voltage Rate of Change dV/dt 10,000 V/µs Electrostatic Discharge Voltage. JEDEC Method. ESD HBM. Contact VESD ± 8 kV Thermal Characteristics PARAMETER SYMBOL TO220AB TO220FPAB TO-3PF UNITS Typical thermal resistance ӨJC 2.4 4.2 1.2 °C/W Electrical Characteristics (per diode) TJ = 25°C, Unless otherwise noted PARAMETER SYMBOL Test Condition Min Typ Max Units DC Forward Voltage VF IF = 5A 0.77 0.81 V Average Rectified Forward Current IF(AV) 5.0 A VR = 150V - - 5 µA Maximum Reverse Current IR VR = 150V, TJ = 125°C - 5 mA |
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