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CPC3714C Datasheet(PDF) 1 Page - Clare, Inc. |
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CPC3714C Datasheet(HTML) 1 Page - Clare, Inc. |
1 / 4 page www.clare.com DS-CPC3714C-R00A.5 1 CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs Part # Description CPC3714C SOT-89 (100/Tube) CPC3714CTR SOT-89 (2000/Reel) BV DSX/ BV DGX R DS(ON) (max) I DSS (min) Package 350V 14Ω 240mA SOT-89 Applications Features Description Ordering Information Package Pinout • Ignition modules • Normally-on switches • Solid state relays • Converters • Telecommunications • Power supply • Depletion mode device offers low R DS(ON) at cold temperatures • Low on resistance 14 ohms max. at 25ºC • High input impedance • High breakdown voltage 350V • Low V GS(off) voltage -1.6 to -3.9V • Small package size SOT-89 The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3714C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3714C offers a low 14 ohm maximum on- state resistance at 25ºC. The CPC3714C has a minimum breakdown voltage of 350V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. (SOT-89) G D S D Switching Waveform 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT 0V VDD Rgen 0V -10V 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT 0V VDD Rgen 0V -10V Test Circuit |
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