IPI80N03S4L-04 datasheet(3/9 Pages) INFINEON

Part #	IPI80N03S4L-04

Description	OptiMOS-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

IPB80N03S4L-03

IPI80N03S4L-04, IPP80N03S4L-04

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

4000

5100

pF

Output capacitance

C oss

-

1000

1300

Reverse transfer capacitance

Crss

-

53

100

Turn-on delay time

t d(on)

-9

-

ns

Rise time

t r

-6

-

Turn-off delay time

t d(off)

-37

-

Fall time

t f

-7

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-12

15

nC

Gate to drain charge

Q gd

-8

16

Gate charge total

Q g

-60

75

Gate plateau voltage

V plateau

-

3.1

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

80

A

Diode pulse current

2)

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=80 A,

T j=25 °C

0.6

0.9

1.3

V

Reverse recovery time

2)

t rr

V R=15 V, I F=I S,

di F/dt =100 A/µs

-60

-

ns

Reverse recovery charge

2)

Q rr

-50

-

nC

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.6K/W the chip is able to carry 163A at 25°C. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

T C=25 °C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=80 A, R G=3.5 Ω

V DD=24 V, I D=80 A,

V GS=0 to 10 V

Rev. 2.0

page 3

2007-03-09

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