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IPD50N06S4L-12 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD50N06S4L-12 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPD50N06S4L-12 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V 50 A T C=100°C, V GS=10V 2) 36 Pulsed drain current 1) I D,pulse T C=25°C 200 Avalanche energy, single pulse 1) E AS I D=25A 33 mJ Avalanche current, single pulse I AS - 50 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 50 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 − Value V DS 60 V R DS(on),max 12 m Ω I D 50 A Product Summary PG-TO252-3-11 Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Rev. 1.0 page 1 2009-03-23 |
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