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IPD70N03S4L-04 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPD70N03S4L-04 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPD70N03S4L-04 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - - 2.2 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm 2 cooling area3) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 1.0 1.5 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=30 V, V GS=0 V, T j=125 °C 2) - 10 1000 V DS=18 V, V GS=0 V, T j=85 °C 2) -5 60 Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=35 A - 4.9 5.7 m Ω V GS=10 V, I D=70 A - 3.6 4.3 Values Rev. 2.0 page 2 2007-03-09 |
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