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IPG20N06S3L-35 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPG20N06S3L-35 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPG20N06S3L-35 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - - - 5 K/W SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm 2 cooling area3) -60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=15 µA 1.2 1.7 2.2 Zero gate voltage drain current 5) I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=55 V, V GS=0 V, T j=125 °C 2) - 1 100 Gate-source leakage current 5) I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance 5) R DS(on) V GS=5 V, I D=7A -53 62 m Ω V GS=10 V, I D=11A -30 35 Values Rev. 1.0 page 2 2008-09-23 |
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