IPI45P03P4L-11 datasheet(3/9 Pages) INFINEON

Part #	IPI45P03P4L-11

Description	OptiMOS-P2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

IPB45P03P4L-11

IPI45P03P4L-11, IPP45P03P4L-11

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

2900

3770

pF

Output capacitance

C oss

-

835

1090

Reverse transfer capacitance

Crss

-21

42

Turn-on delay time

t d(on)

-7

-

ns

Rise time

t r

-3

-

Turn-off delay time

t d(off)

-45

-

Fall time

t f

-14

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-11

14

nC

Gate to drain charge

Q gd

-5

10

Gate charge total

Q g

-42

55

Gate plateau voltage

V plateau

-

-3.6

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

-45

A

Diode pulse current

2)

I S,pulse

-

-180

Diode forward voltage

V SD

V GS=0V, I F=-45A,

T j=25°C

-

-1.0

-1.3

V

Reverse recovery time

2)

t rr

-35

-

ns

Reverse recovery charge

2)

Q rr

-26

-

nC

T C=25°C

Values

V GS=0V, V DS=-25V,

f =1MHz

V DD=-15V,

V GS=-10V, I D=-45A,

R G=3.5Ω

V DD=-24V, I D=-45A,

V GS=0 to -10V

V R=-15V, I F=-45A,

di F/dt =-100A/µs

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 2.6K/W the chip is able to carry -A at 25°C.

Rev. 1.0

page 3

2008-07-29

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IPI45P03P4L-11 Datasheet(PDF) 3 Page - Infineon Technologies AG

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