IPI120N06S4-03 datasheet(2/9 Pages) INFINEON

Part #	IPI120N06S4-03

Description	OptiMOS-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

IPB120N06S4-03

IPI120N06S4-03, IPP120N06S4-03

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

-

0.9

K/W

Thermal resistance, junction -

ambient, leaded

R thJA

--

-

62

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm

2 cooling area3)

--

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0V, I D= 1mA

60

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=120µA

2.0

3.0

4.0

Zero gate voltage drain current

I DSS

V DS=60V, V GS=0V,

T j=25°C

-

0.01

1

µA

V DS=60V, V GS=0V,

T j=125°C

2)

-

10

200

Gate-source leakage current

I GSS

V GS=20V, V DS=0V

-

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10V, I D=100A

-

2.6

3.2

m

Ω

V GS=10V, I D=100A,

SMD version

-

2.3

2.8

Values

Rev. 1.0

page 2

2009-03-23

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IPI120N06S4-03 Datasheet(PDF) 2 Page - Infineon Technologies AG

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