EM6AB160TSA datasheet(10/61 Pages) ETRON

Part #	EM6AB160TSA

Description	32M x 16 bit DDR Synchronous DRAM (SDRAM)

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Manufacturer	ETRON [Etron Technology, Inc.]

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EtronTech

EM6AB160TSA

Etron Confidential

10

Rev.1.3

May 2009

Table 12.Absolute Maximum Rating

Symbol

Item

Rating

Unit

VIN, VOUT

Input, Output Voltage

- 0.5~ VDDQ + 0.5

V

VDD, VDDQ

Power Supply Voltage

- 1~3.6

V

TA

Ambient Temperature

0~70

°C

TSTG

Storage Temperature

- 55~150

°C

TSOLDER

Soldering Temperature

260

°C

PD

Power Dissipation

1.5

W

IOUT

Short Circuit Output Current

50

mA

Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device.

Note2: These voltages are relative to Vss

Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 °C)

Parameter

Symbol

Min.

Max.

Unit

Note

Power Supply Voltage

VDD

2.375

2.625

V

Power Supply Voltage (for I/O Buffer)

VDDQ

2.375

2.625

V

Input Reference Voltage

VREF

0.49*VDDQ

0.51* VDDQ

V

Input High Voltage (DC)

VIH (DC) VREF + 0.15

VDDQ + 0.3

V

Input Low Voltage (DC)

VIL (DC)

-0.3

VREF – 0.15

V

Termination Voltage

VTT

VREF - 0.04

VREF + 0.04

V

Input Voltage Level, CLK and CLK inputs

VIN (DC)

-0.3

VDDQ + 0.3

V

Input Different Voltage, CLK and CLK inputs

VID (DC)

0.36

VDDQ + 0.6

V

Input leakage current

II

-2

2

µA

Output leakage current

IOZ

-5

5

µA

Output High Voltage

VOH

VTT + 0.76

-

V

IOH = -15.2 mA

Output Low Voltage

VOL

-

VTT – 0.76

V

IOL = +15.2 mA

Note : All voltages are referenced to VSS.

Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C)

Symbol

Parameter

Min.

Max.

Unit

CIN1

Input Capacitance (CK, CK )

2.5

3.5

pF

CIN2

Input Capacitance (All other input-only pins)

2.5

3.5

pF

CI/O

DQ, DQS, DM Input/Output Capacitance

4.0

5.0

pF

Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested

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