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3378N–SEEPR–1/09

AT93C56A/66A

4.

Functional Description

The AT93C56A/66A is accessed via a simple and versatile three-wire serial communication

interface. Device operation is controlled by seven instructions issued by the host processor. A

valid instruction starts with a rising edge of CS and consists of a Start Bit (logic “1”) followed

by the appropriate Op Code and the desired memory address location.

READ (READ): The Read (READ) instruction contains the address code for the memory loca-

tion to be read. After the instruction and address are decoded, data from the selected memory

location is available at the serial output pin DO. Output data changes are synchronized with the

rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or

16-bit data output string. The AT93C56A/66A supports sequential read operations. The device

will automatically increment the internal address pointer and clock out the next memory location

as long as Chip Select (CS) is held high. In this case, the dummy bit (logic “0”) will not be

clocked out between memory locations, thus allowing for a continuous stream of data to be read.

ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the

Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN)

instruction must be executed first before any programming instructions can be carried out.

Please note that once in the EWEN state, programming remains enabled until an EWDS instruc-

tion is executed or V

ERASE (ERASE): The Erase instruction programs all bits in the specified memory location to

the logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address

are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought high after

being kept low for a minimum of 250 ns (t

memory location has been erased, and the part is ready for another instruction.

WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written

into the specified memory location. The self-timed programming cycle t

of data is received at serial data input pin DI. The DO pin outputs the Ready/Busy status of the

part if CS is brought high after being kept low for a minimum of 250 ns (t

indicates that programming is still in progress. A logic “1” indicates that the memory location at

the specified address has been written with the data pattern contained in the instruction and the

part is ready for further instructions. A READY/BUSY status cannot be obtained if the CS is

brought high after the end of the self-timed programming cycle t

ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array

to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the

Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns

(t

WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the

data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if

CS is brought high after being kept low for a minimum of 250 ns (t

valid only at V

ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write

Disable (EWDS) instruction disables all programming modes and should be executed after all

programming operations. The operation of the READ instruction is independent of both the

EWEN and EWDS instructions and can be executed at any time.