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5962-3826703MYX Datasheet(PDF) 2 Page - ATMEL Corporation |
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5962-3826703MYX Datasheet(HTML) 2 Page - ATMEL Corporation |
2 / 16 page 2 0010D–PEEPR–7/09 AT28C010 Military Description The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem- ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 μA. The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128- bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention character- istics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 128-bytes of EEPROM for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature Under Bias................................ -55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V |
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