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MMC9-65608EV-30-E Datasheet(PDF) 6 Page - ATMEL Corporation |
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MMC9-65608EV-30-E Datasheet(HTML) 6 Page - ATMEL Corporation |
6 / 16 page 6 4151N–AERO–04/09 M65608E AC Parameters AC Test Conditions AC Test Loads Waveforms Data Retention Mode Atmel CMOS RAM’s are designed with battery backup in mind. Data retention voltage and sup- ply current are guaranteed over temperature. The following rules ensure data retention: 1. During data retention chip select CS1 must be held high within VCC to VCC -0.2V or, chip select CS2 must be held down within GND to GND +0.2V. 2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, mini- mizing power dissipation. 3. During power up and power-down transitions CS1 and OE must be kept between VCC + 0.3V and 70% of VCC, or with CS2 between GND and GND -0.3V. 4. The RAM can begin operation > TR ns after VCC reaches the minimum operation volt- ages (4.5V). Timing Input Pulse Levels: ....................................GND to 3.0V Input Rise/Fall Times: ...............................5 ns Input Timing Reference Levels: ................1.5V Output loading IOL/IOH (see Figure 1 and Figure 2)+30 pF Figure 1 Figure 2 Figure 3 |
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