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AT24C04B-TH-B Datasheet(PDF) 4 Page - ATMEL Corporation |
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AT24C04B-TH-B Datasheet(HTML) 4 Page - ATMEL Corporation |
4 / 28 page 4 AT24C04B/08B 5226G–SEEPR–11/09 2. Memory Organization AT24C04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address for random word addressing. AT24C08B, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word address for random word addressing. Table 2. Pin Capacitance (1) Applicable over recommended operating range from T A = 25°C, f = 1.0 MHz, VCC = +1.8V Symbol Test Condition Max Units Conditions C I/O Input/Output Capacitance (SDA) 8 pF V I/O = 0V C IN Input Capacitance (A 0, A1, A2, SCL) 6 pF V IN = 0V Note: 1. This parameter is characterized and is not 100% tested. Table 3. DC Characteristics Applicable over recommended operating range from: T AI = –40°C to +85°C, VCC = +1.8V to +5.5V (unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Units V CC1 Supply Voltage 1.8 5.5 V V CC2 Supply Voltage 2.5 5.5 V V CC3 Supply Voltage 2.7 5.5 V V CC4 Supply Voltage 4.5 5.5 V I CC Supply Current V CC = 5.0V READ at 100 kHz 0.4 1.0 mA I CC Supply Current V CC = 5.0V WRITE at 100 kHz 2.0 3.0 mA I SB1 Supply Current V CC = 1.8V V IN = VCC or VSS 0.6 3.0 µA I SB2 Supply Current V CC = 2.5V V IN = VCC or VSS 1.4 4.0 µA I SB3 Supply Current V CC = 2.7V V IN = VCC or VSS 1.6 4.0 µA I SB4 Supply Current V CC = 5.0V V IN = VCC or VSS 8.0 18.0 µA I LI Input Leakage Current V IN = VCC or VSS 0.10 3.0 µA I LO Output Leakage Current V OUT = VCC or VSS 0.05 3.0 µA V IL Input Low Level (1) - 0.6 V CC x 0.3 V V IH Input High Level (1) V CC x 0.7 V CC + 0.5 V V OL2 Output Low Level V CC = 3.0V I OL = 2.1 mA 0.4 V V OL1 Output Low Level V CC = 1.8V I OL = 0.15 mA 0.2 V Note: 1. V IL min and VIH max are reference only and are not tested. |
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