HANBit

HMF4M32M8V

URL:www.hbe.co.kr

3

HANBit Electronics Co., Ltd

REV.02(August,2002).

TRUTH TABLE

MODE

/OE

/CE

/WE

/RESET

DQ ( /BYTE=L )

POWER

STANDBY

X

H

X

Vcc

±0.3V

HIGH-Z

STANDBY

NOT SELECTED

H

L

H

H

HIGH-Z

ACTIVE

READ

L

L

H

H

ACTIVE

WRITE or ERASE

X

L

L

H

ACTIVE

NOTE: X means don

’t care

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

Voltage with respect to ground all other pins

-0.5V to Vcc+0.5V

Voltage with respect to ground Vcc

-0.5V to +4.0V

Power dissipation

PD

8W

Storage Temperature

-65oC to +150oC

Operating Temperature

-55oC to +125oC

w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated

in the operating section of this specification is not imp lied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

SYMBOL

MIN

TYP.

MAX

Vcc for

± 10% device Supply Voltages

Vcc

2.7V

3.6V

Ground

0

0

0

DC AND OPERATING CHARACTERISTICS ( 0oC

≤ TA ≤ 70 oC )

PARAMETER

TEST CONDITIONS

SYMBO

L

MIN

MAX

UNIT

Input Load Current

±1.0

µA

Output Leakage Current

±1.0

µA

Output High Voltage

0.85x

Vcc

V

Output Low Voltage

0.45

V

5MHZ

72(Tpy)

128

Vcc Active Read Current (1)

1MHZ

16(Tpy)

32

mA

Vcc Active Write Current (2)

160(Tpy)

240

mA

Vcc Standby Current

/CE, /RESET=Vcc

±0.3V

1.6(Tpy)

40.0

µA

Low Vcc Lock-Out Voltage

2.3

2.5

V

Notes: