REJ03G1198-0500 Rev.5.00 Aug 25, 2009

Page 1 of 11

Preliminary

HAT3008R, HAT3008RJ

Silicon N / P Channel Power MOS FET

High Speed Power Switching

REJ03G1198-0500

Rev.5.00

Aug 25, 2009

Features

• For Automotive Application (at Type Code “J”)

• Low on-resistance

• Capable of 4 V gate drive

• High density mounting

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8 <FP-8DAV> )

1, 3

Source

2, 4

Gate

5, 6, 7, 8

Drain

G

D

S

D

G

D

S

D

Nch

Pch

1

2

78

4

56

3

1 2

3 4

5

6

7

8

Absolute Maximum Ratings

(Ta = 25

°C)

Value

Item

Symbol

Nch

Pch

Unit

Drain to source voltage

60

–60

V

Gate to source voltage

±20

±20

V

Drain current

5

–3.5

A

Drain peak current

Note 1

40

–28

A

Body-drain diode reverse drain current

5

–3.5

A

HAT3008R

—

—

—

Avalanche current

HAT3008RJ

Note 4

5

–3.5

A

HAT3008R

—

—

—

Avalanche energy

HAT3008RJ

Note 4

2.14

1.05

mJ

Channel dissipation

Pch

Note 2

2

2

W

Channel dissipation

Pch

Note 3

3

3

W

Channel temperature

Tch

150

150

°C

Storage temperature

Tstg

–55 to +150

–55 to +150

°C

Notes: 1. PW

≤ 10 μs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

4. Value at Tch = 25

°C, Rg ≥ 50 Ω