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RKZ6.8Z4KTP Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RKZ6.8Z4KTP Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page  RKZ6.8Z4KT REJ03G1820-0100 Rev.1.00 Sep.15.2009 Page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note : Four devices total, See Fig.2. Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR1 — — 2 nA VR = 3.5 V Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz Dynamic resistance rd — — 30 Ω IZ = 5 mA ESD-Capability * 2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes : 1. Per one device. 2. Failure criterion ; IR > 2 μA at VR = 3.5 V. 3. Between cathode and anode. |
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